All MOSFET. BSV236SP Datasheet

 

BSV236SP MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSV236SP
   Marking Code: X2s
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.8 nC
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: SOT363

 BSV236SP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSV236SP Datasheet (PDF)

 ..1. Size:128K  infineon
bsv236sp .pdf

BSV236SP
BSV236SP

BSV 236SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 175 m Enhancement modeID -1.5 A Super Logic Level (2.5 V rated)PG-SOT-363 150C operating temperature4 Avalanche rated 56 dv/dt rated321VPS05604 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21

 ..2. Size:151K  infineon
bsv236sp.pdf

BSV236SP
BSV236SP

BSV 236SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 175 m Enhancement modeID -1.5 A Super Logic Level (2.5 V rated)PG-SOT-363 150C operating temperature4 Avalanche rated 56 dv/dt rated321VPS05604 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21

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History: JCS1SN60VC | ELM34604AA | IRFH5406PBF | AM5480N | STW70N10F4 | CHM3U22VESGP

 

 
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