All MOSFET. BSV236SP Datasheet

 

BSV236SP Datasheet and Replacement


   Type Designator: BSV236SP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: SOT363
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BSV236SP Datasheet (PDF)

 ..1. Size:128K  infineon
 bsv236sp .pdf pdf_icon

BSV236SP

BSV 236SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 175 m Enhancement modeID -1.5 A Super Logic Level (2.5 V rated)PG-SOT-363 150C operating temperature4 Avalanche rated 56 dv/dt rated321VPS05604 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21

 ..2. Size:151K  infineon
 bsv236sp.pdf pdf_icon

BSV236SP

BSV 236SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 175 m Enhancement modeID -1.5 A Super Logic Level (2.5 V rated)PG-SOT-363 150C operating temperature4 Avalanche rated 56 dv/dt rated321VPS05604 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21

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History: MVB50P03HDLT4G | HY1607P | AO4406A | GSM4936S | WSD4080DN56 | P1060AT | ATM2N65TE

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