BSZ42DN25NS3G Specs and Replacement
Type Designator: BSZ42DN25NS3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.425 Ohm
Package: TSDSON8
BSZ42DN25NS3G substitution
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BSZ42DN25NS3G datasheet
bsz42dn25ns3g.pdf
Type BSZ42DN25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V Optimized for dc-dc conversion RDS(on),max 425 mW N-channel, normal level ID 5 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC... See More ⇒
bsz42dn25ns3.pdf
Type BSZ42DN25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V Optimized for dc-dc conversion RDS(on),max 425 mW N-channel, normal level ID 5 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for... See More ⇒
Detailed specifications: BSZ160N10NS3G, BSZ165N04NSG, BSZ16DN25NS3G, BSZ180P03NS3G, BSZ180P03NS3EG, BSZ22DN20NS3G, BSZ240N12NS3G, BSZ340N08NS3G, AO4407, BSZ440N10NS3G, BSZ520N15NS3G, BSZ900N15NS3G, BSZ900N20NS3G, BUZ30AH, BUZ30AH3045A, BUZ31H, BUZ31H3045A
Keywords - BSZ42DN25NS3G MOSFET specs
BSZ42DN25NS3G cross reference
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