BSZ42DN25NS3G Datasheet and Replacement
Type Designator: BSZ42DN25NS3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.425 Ohm
Package: TSDSON8
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BSZ42DN25NS3G Datasheet (PDF)
bsz42dn25ns3g.pdf

TypeBSZ42DN25NS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 250 V Optimized for dc-dc conversionRDS(on),max 425 mW N-channel, normal levelID 5 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC
bsz42dn25ns3.pdf

TypeBSZ42DN25NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V Optimized for dc-dc conversionRDS(on),max 425mW N-channel, normal levelID 5 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: MTB30N06V8 | 2SK2402 | KNE6303A | IPD65R600C6 | IXFH110N10P | RSE002P03TL | TPC8001
Keywords - BSZ42DN25NS3G MOSFET datasheet
BSZ42DN25NS3G cross reference
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History: MTB30N06V8 | 2SK2402 | KNE6303A | IPD65R600C6 | IXFH110N10P | RSE002P03TL | TPC8001



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