BSZ440N10NS3G MOSFET Datasheet: N-Ch, 100V, 18A. Full specification with pinout and replacement list

BSZ440N10NS3G Specs and Replacement

Type Designator: BSZ440N10NS3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.8 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: TSDSON8

BSZ440N10NS3G substitution

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BSZ440N10NS3G datasheet

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 100 V BSZ440N10NS3 G Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 100 V BSZ440N10NS3 G S3O8 1 Description 8 7 6 Features 5 Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal l... See More ⇒

2.1. Size:478K infineon
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BSZ440N10NS3 G Product Summary 3 Power-Transistor V 1 D Features R 44 m D n) m x Q .5BI C I 1 D Q ( @D9=9J54 6?B 43 43 3?>F5BC9?> Q ' 381>>5?B=1... See More ⇒

Detailed specifications: BSZ165N04NSG, BSZ16DN25NS3G, BSZ180P03NS3G, BSZ180P03NS3EG, BSZ22DN20NS3G, BSZ240N12NS3G, BSZ340N08NS3G, BSZ42DN25NS3G, BS170, BSZ520N15NS3G, BSZ900N15NS3G, BSZ900N20NS3G, BUZ30AH, BUZ30AH3045A, BUZ31H, BUZ31H3045A, BUZ31LH