BSZ900N15NS3G Datasheet and Replacement
Type Designator: BSZ900N15NS3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 46 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TSDSON8
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BSZ900N15NS3G Datasheet (PDF)
bsz900n15ns3g bsz900n15ns3 .pdf

sBSZ900N15NS3 GOptiMOSTM3 Power-TransistorProduct SummaryPackageV 150 VDSMarkingR 90mDS(on),max N-channel, normal levelI 13 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
bsz900n20ns3 bsz900n20ns3g.pdf

TypeBSZ900N20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 90mW N-channel, normal levelID 15.2 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 7NM70G-TM3-T | IRFZ48RS | IXTH13N80 | 23N50 | WSD30L30DN | FTK3022 | IPI47N10S-33
Keywords - BSZ900N15NS3G MOSFET datasheet
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History: 7NM70G-TM3-T | IRFZ48RS | IXTH13N80 | 23N50 | WSD30L30DN | FTK3022 | IPI47N10S-33



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