BSZ900N20NS3G MOSFET Datasheet: N-Ch, 200V, 15.2A. Full specification with pinout and replacement list

BSZ900N20NS3G Specs and Replacement

Type Designator: BSZ900N20NS3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TSDSON8

BSZ900N20NS3G substitution

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BSZ900N20NS3G datasheet

..1. Size:568K infineon
bsz900n20ns3 bsz900n20ns3g.pdf pdf_icon

Type BSZ900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V Optimized for dc-dc conversion RDS(on),max 90 mW N-channel, normal level ID 15.2 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f... See More ⇒

7.1. Size:322K infineon
bsz900n15ns3g bsz900n15ns3 .pdf pdf_icon

s BSZ900N15NS3 G OptiMOSTM3 Power-Transistor Product Summary Package V 150 V DS Marking R 90 m DS(on),max N-channel, normal level I 13 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application... See More ⇒

Detailed specifications: BSZ180P03NS3EG, BSZ22DN20NS3G, BSZ240N12NS3G, BSZ340N08NS3G, BSZ42DN25NS3G, BSZ440N10NS3G, BSZ520N15NS3G, BSZ900N15NS3G, IRF1407, BUZ30AH, BUZ30AH3045A, BUZ31H, BUZ31H3045A, BUZ31LH, BUZ32H, BUZ32H3045A, BUZ73H