IPA075N15N3G Specs and Replacement
Type Designator: IPA075N15N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 638 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO220FP
IPA075N15N3G substitution
- MOSFET ⓘ Cross-Reference Search
IPA075N15N3G datasheet
ipa075n15n3g.pdf
pe IPA075N15N3 G TM 3 Power-Transistor Product Summary Features V 1 D k e R 7 m D n) m x M kin I 4 D Q .5BI B5C9CD1>35 R D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 7 1>4 CI>38B?>?EC B53D96931D9?> Q "1... See More ⇒
ipa075n15n3.pdf
pe IPA075N15N3 G TM 3 Power-Transistor Product Summary Features V 1 D k e R 7 m D n) m x M kin I 4 D Q .5BI B5C9CD1>35 R D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 7 1>4 CI>38B?>?EC B53D96931D9?> Q "1... See More ⇒
ipa075n15n3.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA075N15N3 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: BUZ73LH, IPA028N08N3G, IPA030N10N3G, IPA032N06N3G, IPA037N08N3G, IPA045N10N3G, IPA057N06N3G, IPA057N08N3G, STP65NF06, IPA086N10N3G, IPA093N06N3G, IPA100N08N3G, IPA105N15N3G, IPA126N10N3G, IPA180N10N3G, IPA50R140CP, IPA50R199CP
Keywords - IPA075N15N3G MOSFET specs
IPA075N15N3G cross reference
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IPA075N15N3G substitution
IPA075N15N3G replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AP6P025H
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