All MOSFET. IPA100N08N3G Datasheet

 

IPA100N08N3G Datasheet and Replacement


   Type Designator: IPA100N08N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220FP
 

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IPA100N08N3G Datasheet (PDF)

 3.1. Size:538K  infineon
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IPA100N08N3G

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 9.1. Size:550K  infineon
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IPA100N08N3G

IPA105N15N3 GTM 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 9.2. Size:548K  infineon
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IPA100N08N3G

IPA105N15N3 GTM 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 9.3. Size:201K  inchange semiconductor
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IPA100N08N3G

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA105N15N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

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Datasheet: IPA032N06N3G , IPA037N08N3G , IPA045N10N3G , IPA057N06N3G , IPA057N08N3G , IPA075N15N3G , IPA086N10N3G , IPA093N06N3G , RU7088R , IPA105N15N3G , IPA126N10N3G , IPA180N10N3G , IPA50R140CP , IPA50R199CP , IPA50R250CP , IPA50R299CP , IPA50R350CP .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452 | HM120N04D

Keywords - IPA100N08N3G MOSFET datasheet

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