APT5030AVR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT5030AVR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 155
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 14.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 110
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO3
APT5030AVR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT5030AVR
Datasheet (PDF)
..1. Size:61K apt
apt5030avr.pdf
APT5030AVR500V 14.7A 0.300POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
7.1. Size:36K apt
apt5030bn.pdf
DTO-247GAPT5025BN 500V 23.0A 0.25SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5025BN 5030BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C23 21AmpsIDM Pulsed Drain Current 192 84V
8.1. Size:61K apt
apt5032cvr.pdf
APT5032CVR500V 14A 0.320POWER MOS VTO-254TO-254Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested
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