APT5030AVR Datasheet and Replacement
Type Designator: APT5030AVR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 110 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3
APT5030AVR substitution
APT5030AVR Datasheet (PDF)
apt5030avr.pdf

APT5030AVR500V 14.7A 0.300POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt5030bn.pdf

DTO-247GAPT5025BN 500V 23.0A 0.25SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5025BN 5030BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C23 21AmpsIDM Pulsed Drain Current 192 84V
apt5032cvr.pdf

APT5032CVR500V 14A 0.320POWER MOS VTO-254TO-254Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested
Datasheet: APT5022AVR , APT5024AVR , APT5024BVFR , APT5024BVR , APT5025BN , APT5026HVR , APT5028BVR , APT5028SVR , P0903BDG , APT5032CVR , APT5040CNR , APT50M50JVFR , APT50M50JVR , APT50M50PVR , APT50M60JN , APT50M85JVFR , APT50M85JVR .
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