All MOSFET. IPB77N06S2-12 Datasheet

 

IPB77N06S2-12 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB77N06S2-12
   Marking Code: 2N0612
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 77 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0117 Ohm
   Package: TO263

 IPB77N06S2-12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB77N06S2-12 Datasheet (PDF)

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 ipp77n06s2-12 ipb77n06s2-12.pdf

IPB77N06S2-12 IPB77N06S2-12

IPB77N06S2-12IPP77N06S2-12OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 11.7mDS(on),max Automotive AEC Q101 qualifiedI 77 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedTyp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NP90N04MDH

 

 
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