IPB77N06S2-12 PDF and Equivalents Search

 

IPB77N06S2-12 Specs and Replacement

Type Designator: IPB77N06S2-12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 77 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0117 Ohm

Package: TO263

IPB77N06S2-12 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPB77N06S2-12 datasheet

 ..1. Size:155K  infineon
 ipp77n06s2-12 ipb77n06s2-12.pdf pdf_icon

IPB77N06S2-12

IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 11.7 m DS(on),max Automotive AEC Q101 qualified I 77 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Typ... See More ⇒

Detailed specifications: IPB45P03P4L-11, IPB47N10S-33, IPB47N10SL-26, IPB50N10S3L-16, IPB70N04S3-07, IPB70N10S3-12, IPB70N10S3L-12, IPB70N10SL-16, IRFP250, IPB80N03S4L-02, IPB80N03S4L-03, IPB80N04S2-04, IPB80N04S2-H4, IPB80N04S2L-03, IPB80N04S3-03, IPB80N04S3-04, IPB80N04S3-06

Keywords - IPB77N06S2-12 MOSFET specs

 IPB77N06S2-12 cross reference

 IPB77N06S2-12 equivalent finder

 IPB77N06S2-12 pdf lookup

 IPB77N06S2-12 substitution

 IPB77N06S2-12 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.