IPB020N04NG Specs and Replacement
Type Designator: IPB020N04NG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 2000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO263-7
IPB020N04NG substitution
IPB020N04NG datasheet
ipb020n04n ipb020n04ng.pdf
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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB020N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB020N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance... See More ⇒
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IPB020N10N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 100 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain ... See More ⇒
Detailed specifications: IPB011N04LG , IPB011N04NG , IPB015N04LG , IPB015N04NG , IPB016N06L3G , IPB017N06N3G , IPB019N06L3G , IPB019N08N3G , 20N60 , IPB020NE7N3G , IPB021N06N3G , IPB022N04LG , IPB023N04NG , IPB023N06N3G , IPB025N08N3G , IPB025N10N3G , IPB027N10N3G .
History: IPB019N08N3G
Keywords - IPB020N04NG MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPB019N08N3G
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