IPB020N04NG Datasheet. Specs and Replacement
Type Designator: IPB020N04NG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 2000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO263-7
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IPB020N04NG substitution
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IPB020N04NG datasheet
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Detailed specifications: IPB011N04LG, IPB011N04NG, IPB015N04LG, IPB015N04NG, IPB016N06L3G, IPB017N06N3G, IPB019N06L3G, IPB019N08N3G, 20N60, IPB020NE7N3G, IPB021N06N3G, IPB022N04LG, IPB023N04NG, IPB023N06N3G, IPB025N08N3G, IPB025N10N3G, IPB027N10N3G
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