IPB031NE7N3G Datasheet and Replacement

IPB031NE7N3 GTM 3 Power-TransistorProduct SummaryFeaturesV 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?>R 1 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCI 1 DQ H35

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB031NE7N3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPB031N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPB031N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

Isc N-Channel MOSFET Transistor IPB031N08N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V