IPB031NE7N3G PDF and Equivalents Search

 

IPB031NE7N3G Specs and Replacement


   Type Designator: IPB031NE7N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 1380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO263
 

 IPB031NE7N3G substitution

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IPB031NE7N3G datasheet

 ..1. Size:534K  infineon
ipb031ne7n3 ipb031ne7n3g.pdf pdf_icon

IPB031NE7N3G

IPB031NE7N3 G TM 3 Power-Transistor Product Summary Features V 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?> R 1 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC I 1 D Q H35... See More ⇒

 3.1. Size:252K  inchange semiconductor
ipb031ne7n3.pdf pdf_icon

IPB031NE7N3G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB031NE7N3 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXI... See More ⇒

 7.1. Size:1124K  infineon
ipb031n08n5.pdf pdf_icon

IPB031NE7N3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB031N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB031N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R... See More ⇒

 7.2. Size:258K  inchange semiconductor
ipb031n08n5.pdf pdf_icon

IPB031NE7N3G

Isc N-Channel MOSFET Transistor IPB031N08N5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

Detailed specifications: IPB022N04LG , IPB023N04NG , IPB023N06N3G , IPB025N08N3G , IPB025N10N3G , IPB027N10N3G , IPB029N06N3G , IPB030N08N3G , IRFP260N , IPB034N03LG , IPB034N06L3G , IPB034N06N3G , IPB035N08N3G , IPB036N12N3G , IPB037N06N3G , IPB038N12N3G , IPB039N04LG .

Keywords - IPB031NE7N3G MOSFET specs

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