IPB034N06L3G MOSFET Datasheet: N-Ch, 60V, 90A. Full specification with pinout and replacement list

IPB034N06L3G Specs and Replacement

   Type Designator: IPB034N06L3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO263

IPB034N06L3G substitution

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IPB034N06L3G datasheet

..1. Size:475K infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf pdf_icon

Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06... See More ⇒

..2. Size:258K inchange semiconductor
ipb034n06l3g.pdf pdf_icon

Isc N-Channel MOSFET Transistor IPB034N06L3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

5.1. Size:674K infineon
ipb034n06n3.pdf pdf_icon

pe IPB034N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> =?C?A 4A9E5B 1>4 43 43 ,&), R 4 m D n) m x P G35... See More ⇒

6.1. Size:725K infineon
ipp034n03lg ipb034n03lg.pdf pdf_icon

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒