IPB100N04S4-H2 Specs and Replacement
Type Designator: IPB100N04S4-H2
Marking Code: 4N04H2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 70 nC
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO263
IPB100N04S4-H2 substitution
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IPB100N04S4-H2 datasheet
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf
IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty... See More ⇒
ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf
IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 mW DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type ... See More ⇒
ipb100n04s2-04 ipp100n04s2-04 ipp100n04s2-04 ipb100n04s2-04.pdf
IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.3 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested T... See More ⇒
ipb100n04s3-03 ipi100n04s3-03 ipp100n04s3-03 ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf
IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD Version) 2.5 m DS(on) I 100 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(... See More ⇒
Detailed specifications: IPB080N06NG , IPB081N06L3G , IPB083N10N3G , IPB08CNE8NG , IPB090N06N3G , IPB093N04LG , IPB096N03LG , IPB097N08N3G , STP80NF70 , IPB107N20N3G , IPB108N15N3G , IPB114N03LG , IPB120N04S4-01 , IPB120N04S4-02 , IPB120N06NG , IPB120N06S4-02 , IPB120N06S4-H1 .
History: FDB8896F085 | HFD8N65U | IPB08CNE8NG
Keywords - IPB100N04S4-H2 MOSFET specs
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IPB100N04S4-H2 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FDB8896F085 | HFD8N65U | IPB08CNE8NG
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