IPB100N04S4-H2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IPB100N04S4-H2
   Marking Code: 4N04H2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO263

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