IPB136N08N3G PDF and Equivalents Search

 

IPB136N08N3G Specs and Replacement

Type Designator: IPB136N08N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 353 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0136 Ohm

Package: TO263

IPB136N08N3G substitution

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IPB136N08N3G datasheet

 3.1. Size:496K  infineon
 ipb136n08n3-g ipp139n08n3-g ipi139n08n3-g.pdf pdf_icon

IPB136N08N3G

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching R 13.6 m DS(on),max (SMD) Optimized technology for DC/DC converters I 45 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qual... See More ⇒

Detailed specifications: IPB114N03LG , IPB120N04S4-01 , IPB120N04S4-02 , IPB120N06NG , IPB120N06S4-02 , IPB120N06S4-H1 , IPB123N10N3G , IPB12CNE8NG , RFP50N06 , IPB144N12N3G , IPB147N03LG , IPB160N04S4-H1 , IPB16CN10NG , IPB180N03S4L-01 , IPB180N04S4-01 , IPB180N04S4-H0 , IPB200N15N3G .

Keywords - IPB136N08N3G MOSFET specs

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