IPB136N08N3G Datasheet and Replacement
Type Designator: IPB136N08N3G
Marking Code: 136N08N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 19 nC
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 353 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0136 Ohm
Package: TO263
IPB136N08N3G substitution
IPB136N08N3G Datasheet (PDF)
ipb136n08n3-g ipp139n08n3-g ipi139n08n3-g.pdf
IPP139N08N3 G IPI139N08N3 GIPB136N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching R 13.6mDS(on),max (SMD) Optimized technology for DC/DC convertersI 45 AD Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qual
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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