IPB50R250CP Datasheet and Replacement
Type Designator: IPB50R250CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO263
IPB50R250CP substitution
IPB50R250CP Datasheet (PDF)
ipb50r250cp.pdf

Isc N-Channel MOSFET Transistor IPB50R250CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb50r299cp.pdf

Isc N-Channel MOSFET Transistor IPB50R299CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IPB260N06N3G , IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP , STP65NF06 , IPB50R299CP , IPB530N15N3G , IPB600N25N3G , IPB60R099C6 , IPB60R099CP , IPB60R099CPA , IPB60R125C6 , IPB60R125CP .
History: CTLM8110-M832D | HSS2306A
Keywords - IPB50R250CP MOSFET datasheet
IPB50R250CP cross reference
IPB50R250CP equivalent finder
IPB50R250CP lookup
IPB50R250CP substitution
IPB50R250CP replacement
History: CTLM8110-M832D | HSS2306A



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