IPB530N15N3G PDF and Equivalents Search

 

IPB530N15N3G Specs and Replacement

Type Designator: IPB530N15N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 80 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: TO263

IPB530N15N3G substitution

- MOSFET ⓘ Cross-Reference Search

 

IPB530N15N3G datasheet

 ..1. Size:983K  infineon
ipb530n15n3 ipb530n15n3g ipi530n15n3g ipd530n15n3g ipp530n15n3g.pdf pdf_icon

IPB530N15N3G

# ! ! # ! ! # ! ! ## ! ! TM # A0A= 2?E #2=@86? !C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH ... See More ⇒

 ..2. Size:961K  infineon
ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf pdf_icon

IPB530N15N3G

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 53 mW Excellent gate charge x R product (FOM) DS(on) ID 21 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to ... See More ⇒

Detailed specifications: IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP , IPB50R250CP , IPB50R299CP , IRLB3034 , IPB600N25N3G , IPB60R099C6 , IPB60R099CP , IPB60R099CPA , IPB60R125C6 , IPB60R125CP , IPB60R160C6 , IPB60R165CP .

Keywords - IPB530N15N3G MOSFET specs

 IPB530N15N3G cross reference
 IPB530N15N3G equivalent finder
 IPB530N15N3G pdf lookup
 IPB530N15N3G substitution
 IPB530N15N3G replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
↑ Back to Top
.