All MOSFET. IPB530N15N3G Datasheet

 

IPB530N15N3G Datasheet and Replacement


   Type Designator: IPB530N15N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TO263
 

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IPB530N15N3G Datasheet (PDF)

 ..1. Size:983K  infineon
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IPB530N15N3G

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 ..2. Size:961K  infineon
 ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf pdf_icon

IPB530N15N3G

IPB530N15N3 G IPD530N15N3 GIPI530N15N3 G IPP530N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 53 mW Excellent gate charge x R product (FOM)DS(on)ID 21 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to

Datasheet: IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP , IPB50R250CP , IPB50R299CP , 60N06 , IPB600N25N3G , IPB60R099C6 , IPB60R099CP , IPB60R099CPA , IPB60R125C6 , IPB60R125CP , IPB60R160C6 , IPB60R165CP .

Keywords - IPB530N15N3G MOSFET datasheet

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