All MOSFET. IPB65R600C6 Datasheet

 

IPB65R600C6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB65R600C6
   Marking Code: 65C6600
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 7.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO263

 IPB65R600C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB65R600C6 Datasheet (PDF)

 ..1. Size:2158K  infineon
ipd65r600c6 ipi65r600c6 ipb65r600c6 ipp65r600c6 ipa65r600c6.pdf

IPB65R600C6
IPB65R600C6

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

 ..2. Size:2092K  infineon
ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf

IPB65R600C6
IPB65R600C6

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

 ..3. Size:258K  inchange semiconductor
ipb65r600c6.pdf

IPB65R600C6
IPB65R600C6

Isc N-Channel MOSFET Transistor IPB65R600C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.1. Size:4455K  infineon
ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf

IPB65R600C6
IPB65R600C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R660CFDData SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R660CFD, IPB65R660CFD, IPP65R660CFDIPA65R660CFD, IPD65R660CFD, IPI65R660CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for hi

 7.2. Size:2296K  infineon
ipb65r660cfda ipp65r660cfda.pdf

IPB65R600C6
IPB65R600C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R660CFDA Data SheetRev. 2.1FinalAutomotive650V CoolMOS CFDA Power TransistorIPB65R660CFDA, IPP65R660CFDADPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (

 7.3. Size:258K  inchange semiconductor
ipb65r660cfd.pdf

IPB65R600C6
IPB65R600C6

Isc N-Channel MOSFET Transistor IPB65R660CFDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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