IPB79CN10NG Specs and Replacement
Type Designator: IPB79CN10NG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: TO263
IPB79CN10NG substitution
- MOSFET ⓘ Cross-Reference Search
IPB79CN10NG datasheet
ipb79cn10ng ipd78cn10ng ipi80cn10ng ipp80cn10ng.pdf
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM) DS(on) ID 13 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) ... See More ⇒
ipb79cn10ng.pdf
Isc N-Channel MOSFET Transistor IPB79CN10NG FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC... See More ⇒
Detailed specifications: IPB60R600CP, IPB60R950C6, IPB65R280C6, IPB65R280E6, IPB65R380C6, IPB65R600C6, IPB65R660CFD, IPB70N04S4-06, IRF640N, IPB80N04S4-03, IPD100N04S4-02, IPD100N06S4-03, IPD14N06S2-80, IPD15N06S2L-64, IPD22N08S2L-50, IPD25N06S2-40, IPD25N06S4L-30
Keywords - IPB79CN10NG MOSFET specs
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