IPB79CN10NG - параметры транзистора MOSFET, его аналоги, datasheet

IPB79CN10NG Datasheet (PDF)

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IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM)DS(on)ID 13 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

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Isc N-Channel MOSFET Transistor IPB79CN10NGFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

4.1. Size:534K infineon
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IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

Другие MOSFET... IPB60R600CP , IPB60R950C6 , IPB65R280C6 , IPB65R280E6 , IPB65R380C6 , IPB65R600C6 , IPB65R660CFD , IPB70N04S4-06 , IRF630 , IPB80N04S4-03 , IPD100N04S4-02 , IPD100N06S4-03 , IPD14N06S2-80 , IPD15N06S2L-64 , IPD22N08S2L-50 , IPD25N06S2-40 , IPD25N06S4L-30 .