All MOSFET. IPD14N06S2-80 Datasheet

 

IPD14N06S2-80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD14N06S2-80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252

 IPD14N06S2-80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD14N06S2-80 Datasheet (PDF)

 ..1. Size:147K  infineon
 ipd14n06s2-80.pdf

IPD14N06S2-80 IPD14N06S2-80

IPD14N06S2-80OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 80mDS(on),max Automotive AEC Q101 qualifiedI 17 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD14N06S2

 9.1. Size:992K  infineon
 ipd144n06n g2.pdf

IPD14N06S2-80 IPD14N06S2-80

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUK7510-30

 

 
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