IPD14N06S2-80 Specs and Replacement

Type Designator: IPD14N06S2-80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO252

IPD14N06S2-80 substitution

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IPD14N06S2-80 datasheet

 ..1. Size:147K  infineon
 ipd14n06s2-80.pdf pdf_icon

IPD14N06S2-80

IPD14N06S2-80 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 80 m DS(on),max Automotive AEC Q101 qualified I 17 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD14N06S2... See More ⇒

 9.1. Size:992K  infineon
 ipd144n06n g2.pdf pdf_icon

IPD14N06S2-80

$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= 14 4 mW D n) m x O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2> 0B R C=;4AA >B74@E8A4 A?4285843 j Parameter Symb I C ndit... See More ⇒

Detailed specifications: IPB65R380C6, IPB65R600C6, IPB65R660CFD, IPB70N04S4-06, IPB79CN10NG, IPB80N04S4-03, IPD100N04S4-02, IPD100N06S4-03, IRF3710, IPD15N06S2L-64, IPD22N08S2L-50, IPD25N06S2-40, IPD25N06S4L-30, IPD26N06S2L-35, IPD30N03S2L-07, IPD30N03S2L-10, IPD30N03S2L-20

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