All MOSFET. IPD14N06S2-80 Datasheet

 

IPD14N06S2-80 Datasheet and Replacement


   Type Designator: IPD14N06S2-80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252
 

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IPD14N06S2-80 Datasheet (PDF)

 ..1. Size:147K  infineon
 ipd14n06s2-80.pdf pdf_icon

IPD14N06S2-80

IPD14N06S2-80OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 80mDS(on),max Automotive AEC Q101 qualifiedI 17 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD14N06S2

 9.1. Size:992K  infineon
 ipd144n06n g2.pdf pdf_icon

IPD14N06S2-80

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Datasheet: IPB65R380C6 , IPB65R600C6 , IPB65R660CFD , IPB70N04S4-06 , IPB79CN10NG , IPB80N04S4-03 , IPD100N04S4-02 , IPD100N06S4-03 , P55NF06 , IPD15N06S2L-64 , IPD22N08S2L-50 , IPD25N06S2-40 , IPD25N06S4L-30 , IPD26N06S2L-35 , IPD30N03S2L-07 , IPD30N03S2L-10 , IPD30N03S2L-20 .

History: FTK2N65P

Keywords - IPD14N06S2-80 MOSFET datasheet

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