All MOSFET. IPD15N06S2L-64 Datasheet

 

IPD15N06S2L-64 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD15N06S2L-64
   Marking Code: 2N06L64
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 103 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: TO252

 IPD15N06S2L-64 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD15N06S2L-64 Datasheet (PDF)

 ..1. Size:148K  infineon
 ipd15n06s2l-64.pdf

IPD15N06S2L-64 IPD15N06S2L-64

IPD15N06S2L-64OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 64mDS(on),max Automotive AEC Q101 qualifiedI 19 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

 3.1. Size:287K  inchange semiconductor
 ipd15n06s2l64.pdf

IPD15N06S2L-64 IPD15N06S2L-64

isc N-Channel MOSFET Transistor IPD15N06S2L64FEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 64m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS1N65B3 | AP18P10GJ-HF

 

 
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