IPD15N06S2L-64 Specs and Replacement

Type Designator: IPD15N06S2L-64

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 103 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm

Package: TO252

IPD15N06S2L-64 substitution

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IPD15N06S2L-64 datasheet

 ..1. Size:148K  infineon
 ipd15n06s2l-64.pdf pdf_icon

IPD15N06S2L-64

IPD15N06S2L-64 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 64 m DS(on),max Automotive AEC Q101 qualified I 19 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Markin... See More ⇒

 3.1. Size:287K  inchange semiconductor
 ipd15n06s2l64.pdf pdf_icon

IPD15N06S2L-64

isc N-Channel MOSFET Transistor IPD15N06S2L64 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 64m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒

Detailed specifications: IPB65R600C6, IPB65R660CFD, IPB70N04S4-06, IPB79CN10NG, IPB80N04S4-03, IPD100N04S4-02, IPD100N06S4-03, IPD14N06S2-80, 10N60, IPD22N08S2L-50, IPD25N06S2-40, IPD25N06S4L-30, IPD26N06S2L-35, IPD30N03S2L-07, IPD30N03S2L-10, IPD30N03S2L-20, IPD30N03S4L-09

Keywords - IPD15N06S2L-64 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.