All MOSFET. IPD038N04NG Datasheet

 

IPD038N04NG Datasheet and Replacement


   Type Designator: IPD038N04NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO252
 

 IPD038N04NG substitution

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IPD038N04NG Datasheet (PDF)

 4.1. Size:423K  infineon
 ipd038n04n.pdf pdf_icon

IPD038N04NG

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 6.1. Size:611K  infineon
 ipd038n06n32 ipd038n06n3g.pdf pdf_icon

IPD038N04NG

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 6.2. Size:243K  inchange semiconductor
 ipd038n06n3.pdf pdf_icon

IPD038N04NG

isc N-Channel MOSFET Transistor IPD038N06N3,IIPD038N06N3FEATURESStatic drain-source on-resistance:RDS(on)3.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

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Datasheet: IPD90N06S4L-06 , IPD90P03P4-04 , IPD90P03P4L-04 , IPD031N03LG , IPD031N06L3G , IPD034N06N3G , IPD035N06L3G , IPD036N04LG , K2611 , IPD038N06N3G , IPD040N03LG , IPD042P03L3G , IPD048N06L3G , IPD050N03LG , IPD053N06N3G , IPD053N08N3G , IPD060N03LG .

History: CEU3172

Keywords - IPD038N04NG MOSFET datasheet

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