IPD038N04NG Specs and Replacement

Type Designator: IPD038N04NG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO252

IPD038N04NG substitution

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IPD038N04NG datasheet

 4.1. Size:423K  infineon
 ipd038n04n.pdf pdf_icon

IPD038N04NG

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 6.1. Size:611K  infineon
 ipd038n06n32 ipd038n06n3g.pdf pdf_icon

IPD038N04NG

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 6.2. Size:243K  inchange semiconductor
 ipd038n06n3.pdf pdf_icon

IPD038N04NG

isc N-Channel MOSFET Transistor IPD038N06N3,IIPD038N06N3 FEATURES Static drain-source on-resistance RDS(on) 3.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION For synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

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Detailed specifications: IPD90N06S4L-06, IPD90P03P4-04, IPD90P03P4L-04, IPD031N03LG, IPD031N06L3G, IPD034N06N3G, IPD035N06L3G, IPD036N04LG, 75N75, IPD038N06N3G, IPD040N03LG, IPD042P03L3G, IPD048N06L3G, IPD050N03LG, IPD053N06N3G, IPD053N08N3G, IPD060N03LG

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs