IPD053N06N3G Specs and Replacement

Type Designator: IPD053N06N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO252

IPD053N06N3G substitution

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IPD053N06N3G datasheet

 3.1. Size:615K  infineon
 ipd053n06n3.pdf pdf_icon

IPD053N06N3G

pe # ! ! # A03 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒

 4.1. Size:455K  infineon
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IPD053N06N3G

Type IPD053N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 5.3 mW Superior thermal resistance ID 45 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Hal... See More ⇒

 4.2. Size:242K  inchange semiconductor
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IPD053N06N3G

isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒

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Detailed specifications: IPD035N06L3G, IPD036N04LG, IPD038N04NG, IPD038N06N3G, IPD040N03LG, IPD042P03L3G, IPD048N06L3G, IPD050N03LG, IRFZ48N, IPD053N08N3G, IPD060N03LG, IPD068N10N3G, IPD068P03L3G, IPD075N03LG, IPD079N06L3G, IPD082N10N3G, IPD088N04LG

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 IPD053N06N3G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.