IPD088N04LG Specs and Replacement

Type Designator: IPD088N04LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO252

IPD088N04LG substitution

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IPD088N04LG datasheet

 4.1. Size:429K  infineon
 ipd088n04l.pdf pdf_icon

IPD088N04LG

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 6.1. Size:609K  infineon
 ipd088n06n3 ipd088n06n3g.pdf pdf_icon

IPD088N04LG

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 6.2. Size:210K  inchange semiconductor
 ipd088n06n3g.pdf pdf_icon

IPD088N04LG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD088N06N3G FEATURES With TO-252(DPAK) packaging With low gate drive requirements Very high commutation ruggedness 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC silverbox UPS and solar ABSOLUTE ... See More ⇒

 6.3. Size:243K  inchange semiconductor
 ipd088n06n3.pdf pdf_icon

IPD088N04LG

isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3 FEATURES Static drain-source on-resistance RDS(on) 8.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60... See More ⇒

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Detailed specifications: IPD053N06N3G, IPD053N08N3G, IPD060N03LG, IPD068N10N3G, IPD068P03L3G, IPD075N03LG, IPD079N06L3G, IPD082N10N3G, EMB04N03H, IPD088N06N3G, IPD090N03LG, IPD096N08N3G, IPD105N03LG, IPD105N04LG, IPD110N12N3G, IPD122N10N3G, IPD127N06LG

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.