All MOSFET. IPD088N04LG Datasheet

 

IPD088N04LG Datasheet and Replacement


   Type Designator: IPD088N04LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO252
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IPD088N04LG Datasheet (PDF)

 4.1. Size:429K  infineon
ipd088n04l.pdf pdf_icon

IPD088N04LG

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 6.1. Size:609K  infineon
ipd088n06n3 ipd088n06n3g.pdf pdf_icon

IPD088N04LG

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 6.2. Size:210K  inchange semiconductor
ipd088n06n3g.pdf pdf_icon

IPD088N04LG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD088N06N3GFEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC silverboxUPS and solarABSOLUTE

 6.3. Size:243K  inchange semiconductor
ipd088n06n3.pdf pdf_icon

IPD088N04LG

isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3FEATURESStatic drain-source on-resistance:RDS(on)8.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

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History: SVFP14N65CFJD | MTW7N80E | IRFM9240 | 2SK3562 | QM09N65B | F5S90HVX2 | 2SK715U-AC

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