IPD088N04LG Datasheet and Replacement
Type Designator: IPD088N04LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO252
IPD088N04LG substitution
IPD088N04LG Datasheet (PDF)
ipd088n04l.pdf
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ipd088n06n3 ipd088n06n3g.pdf
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ipd088n06n3g.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD088N06N3GFEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC silverboxUPS and solarABSOLUTE
ipd088n06n3.pdf
isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3FEATURESStatic drain-source on-resistance:RDS(on)8.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60
Datasheet: IPD053N06N3G , IPD053N08N3G , IPD060N03LG , IPD068N10N3G , IPD068P03L3G , IPD075N03LG , IPD079N06L3G , IPD082N10N3G , EMB04N03H , IPD088N06N3G , IPD090N03LG , IPD096N08N3G , IPD105N03LG , IPD105N04LG , IPD110N12N3G , IPD122N10N3G , IPD127N06LG .
History: IXTP75N10P | IXTH21N50 | CSFR2N60U
Keywords - IPD088N04LG MOSFET datasheet
IPD088N04LG cross reference
IPD088N04LG equivalent finder
IPD088N04LG lookup
IPD088N04LG substitution
IPD088N04LG replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IXTP75N10P | IXTH21N50 | CSFR2N60U
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