IPD088N04LG - параметры транзистора MOSFET, его аналоги, datasheet

IPD088N04LG Datasheet (PDF)

4.1. Size:429K infineon
ipd088n04l.pdf pdf_icon

pe % # ! % (>.;?6?@%>EFeaturesV 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*-R m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCI D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DType #* (

6.1. Size:609K infineon
ipd088n06n3 ipd088n06n3g.pdf pdf_icon

pe # ! ! (TM) #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BCDQ H35

6.2. Size:210K inchange semiconductor
ipd088n06n3g.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD088N06N3GFEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC silverboxUPS and solarABSOLUTE

6.3. Size:243K inchange semiconductor
ipd088n06n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3FEATURESStatic drain-source on-resistance:RDS(on)8.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .