IPD170N04NG Specs and Replacement

Type Designator: IPD170N04NG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252

IPD170N04NG substitution

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IPD170N04NG datasheet

 4.1. Size:437K  infineon
 ipd170n04n.pdf pdf_icon

IPD170N04NG

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Detailed specifications: IPD122N10N3G, IPD127N06LG, IPD12CN10NG, IPD135N03LG, IPD135N08N3G, IPD144N06NG, IPD160N04LG, IPD16CN10NG, IRF540, IPD180N10N3G, IPD200N15N3G, IPD220N06L3G, IPD230N06LG, IPD230N06NG, IPD250N06N3G, IPD25CN10NG, IPD320N20N3G

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