All MOSFET. IPD170N04NG Datasheet

 

IPD170N04NG Datasheet and Replacement


   Type Designator: IPD170N04NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252
 

 IPD170N04NG substitution

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IPD170N04NG Datasheet (PDF)

 4.1. Size:437K  infineon
 ipd170n04n.pdf pdf_icon

IPD170N04NG

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Datasheet: IPD122N10N3G , IPD127N06LG , IPD12CN10NG , IPD135N03LG , IPD135N08N3G , IPD144N06NG , IPD160N04LG , IPD16CN10NG , IRF540N , IPD180N10N3G , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IPD320N20N3G .

History: FMV12N50E | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S

Keywords - IPD170N04NG MOSFET datasheet

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