IPD170N04NG Datasheet and Replacement
Type Designator: IPD170N04NG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO252
IPD170N04NG substitution
IPD170N04NG Datasheet (PDF)
ipd170n04n.pdf
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Datasheet: IPD122N10N3G , IPD127N06LG , IPD12CN10NG , IPD135N03LG , IPD135N08N3G , IPD144N06NG , IPD160N04LG , IPD16CN10NG , IRF540 , IPD180N10N3G , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IPD320N20N3G .
History: IRFS620 | MTP2071M3 | P0620ED | P0470JD | IXTH28N50Q | APT5020SVFR | AMCC431P
Keywords - IPD170N04NG MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFS620 | MTP2071M3 | P0620ED | P0470JD | IXTH28N50Q | APT5020SVFR | AMCC431P
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