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IPD200N15N3G Spec and Replacement


   Type Designator: IPD200N15N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252

 IPD200N15N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD200N15N3G Specs

 ..1. Size:993K  infineon
 ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf pdf_icon

IPD200N15N3G

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 20 mW Excellent gate charge x R product (FOM) DS(on) ID 50 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t... See More ⇒

 3.1. Size:242K  inchange semiconductor
 ipd200n15n3.pdf pdf_icon

IPD200N15N3G

isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150... See More ⇒

Detailed specifications: IPD12CN10NG , IPD135N03LG , IPD135N08N3G , IPD144N06NG , IPD160N04LG , IPD16CN10NG , IPD170N04NG , IPD180N10N3G , IRFP460 , IPD220N06L3G , IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IPD320N20N3G , IPD33CN10NG , IPD350N06LG .

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