All MOSFET. IPD320N20N3G Datasheet

 

IPD320N20N3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD320N20N3G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 136 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 34 A

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: DPAK_TO252

IPD320N20N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD320N20N3G Datasheet (PDF)

1.1. ipd320n20n3grev2.3.pdf Size:508K _infineon

IPD320N20N3G
IPD320N20N3G

IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max 32 mW Excellent gate charge x R product (FOM) DS(on) ID 34 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 I

Datasheet: IPD170N04NG , IPD180N10N3G , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IRF1404 , IPD33CN10NG , IPD350N06LG , IPD400N06NG , IPD49CN10NG , IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 .

 


IPD320N20N3G
  IPD320N20N3G
  IPD320N20N3G
 

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