All MOSFET. IPD320N20N3G Datasheet

 

IPD320N20N3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD320N20N3G

Marking Code: 320N20N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 136 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 34 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 22 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 135 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: TO252

IPD320N20N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD320N20N3G Datasheet (PDF)

0.1. ipd320n20n3g.pdf Size:508K _infineon

IPD320N20N3G
IPD320N20N3G

IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V • N-channel, normal level RDS(on),max 32 mW • Excellent gate charge x R product (FOM) DS(on) ID 34 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to

3.1. ipd320n20n3.pdf Size:242K _inchange_semiconductor

IPD320N20N3G
IPD320N20N3G

isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤32mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200

 

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