IPD320N20N3G Datasheet and Replacement
Type Designator: IPD320N20N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252
IPD320N20N3G substitution
IPD320N20N3G Datasheet (PDF)
ipd320n20n3g.pdf

IPD320N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max 32mW Excellent gate charge x R product (FOM)DS(on)ID 34 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to
ipd320n20n3.pdf

isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3FEATURESStatic drain-source on-resistance:RDS(on)32mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200
Datasheet: IPD170N04NG , IPD180N10N3G , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IRF630 , IPD33CN10NG , IPD350N06LG , IPD400N06NG , IPD49CN10NG , IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 .
History: AUIRLB4030
Keywords - IPD320N20N3G MOSFET datasheet
IPD320N20N3G cross reference
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IPD320N20N3G lookup
IPD320N20N3G substitution
IPD320N20N3G replacement
History: AUIRLB4030



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