IPD320N20N3G Datasheet. Specs and Replacement

Type Designator: IPD320N20N3G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO252

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IPD320N20N3G datasheet

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IPD320N20N3G

IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max 32 mW Excellent gate charge x R product (FOM) DS(on) ID 34 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to ... See More ⇒

 3.1. Size:242K  inchange semiconductor
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IPD320N20N3G

isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200... See More ⇒

Detailed specifications: IPD170N04NG, IPD180N10N3G, IPD200N15N3G, IPD220N06L3G, IPD230N06LG, IPD230N06NG, IPD250N06N3G, IPD25CN10NG, IRFP260N, IPD33CN10NG, IPD350N06LG, IPD400N06NG, IPD49CN10NG, IPD50N04S4-08, IPD50N04S4-10, IPD50N04S4L-08, IPD50P04P4L-11

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