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IPD320N20N3G Spec and Replacement


   Type Designator: IPD320N20N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252

 IPD320N20N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD320N20N3G Specs

 ..1. Size:508K  infineon
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IPD320N20N3G

IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max 32 mW Excellent gate charge x R product (FOM) DS(on) ID 34 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to ... See More ⇒

 3.1. Size:242K  inchange semiconductor
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IPD320N20N3G

isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200... See More ⇒

Detailed specifications: IPD170N04NG , IPD180N10N3G , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IRF640N , IPD33CN10NG , IPD350N06LG , IPD400N06NG , IPD49CN10NG , IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 .

Keywords - IPD320N20N3G MOSFET specs

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