All MOSFET. IPD49CN10NG Datasheet

 

IPD49CN10NG Datasheet and Replacement


   Type Designator: IPD49CN10NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: TO252
 

 IPD49CN10NG substitution

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IPD49CN10NG Datasheet (PDF)

 ..1. Size:902K  infineon
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IPD49CN10NG

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Datasheet: IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IPD320N20N3G , IPD33CN10NG , IPD350N06LG , IPD400N06NG , P55NF06 , IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 , IPD50R399CP , IPD50R520CP , IPD530N15N3G , IPD600N25N3G .

History: IPD60R600E6 | FQPF5N60CYDTU | HMS8N50K | 2SK1658 | AON6526 | IPD320N20N3G | STP185N55F3

Keywords - IPD49CN10NG MOSFET datasheet

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