IPD49CN10NG Specs and Replacement

Type Designator: IPD49CN10NG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm

Package: TO252

IPD49CN10NG substitution

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IPD49CN10NG datasheet

 ..1. Size:902K  infineon
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IPD49CN10NG

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Detailed specifications: IPD230N06LG, IPD230N06NG, IPD250N06N3G, IPD25CN10NG, IPD320N20N3G, IPD33CN10NG, IPD350N06LG, IPD400N06NG, IRF3710, IPD50N04S4-08, IPD50N04S4-10, IPD50N04S4L-08, IPD50P04P4L-11, IPD50R399CP, IPD50R520CP, IPD530N15N3G, IPD600N25N3G

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