All MOSFET. IPD49CN10NG Datasheet

 

IPD49CN10NG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD49CN10NG
   Marking Code: 49CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: TO252

 IPD49CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD49CN10NG Datasheet (PDF)

 ..1. Size:902K  infineon
 ipb50cn10ng ipd49cn10ng ipi50cn10ng ipp50cn10ng.pdf

IPD49CN10NG IPD49CN10NG

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HUF75332P3

 

 
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