IPD530N15N3G Datasheet. Specs and Replacement

Type Designator: IPD530N15N3G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: TO252

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IPD530N15N3G datasheet

 ..1. Size:983K  infineon
 ipb530n15n3 ipb530n15n3g ipi530n15n3g ipd530n15n3g ipp530n15n3g.pdf pdf_icon

IPD530N15N3G

# ! ! # ! ! # ! ! ## ! ! TM # A0A= 2?E #2=@86? !C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH ... See More ⇒

 ..2. Size:961K  infineon
 ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf pdf_icon

IPD530N15N3G

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 53 mW Excellent gate charge x R product (FOM) DS(on) ID 21 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to ... See More ⇒

 3.1. Size:242K  inchange semiconductor
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IPD530N15N3G

isc N-Channel MOSFET Transistor IPD530N15N3,IIPD530N15N3 FEATURES Static drain-source on-resistance RDS(on) 53m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150... See More ⇒

Detailed specifications: IPD400N06NG, IPD49CN10NG, IPD50N04S4-08, IPD50N04S4-10, IPD50N04S4L-08, IPD50P04P4L-11, IPD50R399CP, IPD50R520CP, 7N65, IPD600N25N3G, IPD60R1K4C6, IPD60R2K0C6, IPD60R380C6, IPD60R385CP, IPD60R3K3C6, IPD60R450E6, IPD60R520C6

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs