All MOSFET. IPD530N15N3G Datasheet

 

IPD530N15N3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD530N15N3G

Marking Code: 530N15N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 8.7 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.053 Ohm

Package: TO252

IPD530N15N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD530N15N3G Datasheet (PDF)

0.1. ipb530n15n3 ipb530n15n3g ipi530n15n3g ipd530n15n3g ipp530n15n3g.pdf Size:983K _infineon

IPD530N15N3G
IPD530N15N3G

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