IPD530N15N3G Spec and Replacement
Type Designator: IPD530N15N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO252
IPD530N15N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD530N15N3G Specs
ipb530n15n3 ipb530n15n3g ipi530n15n3g ipd530n15n3g ipp530n15n3g.pdf
# ! ! # ! ! # ! ! ## ! ! TM # A0A= 2?E #2=@86? !C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH ... See More ⇒
ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 53 mW Excellent gate charge x R product (FOM) DS(on) ID 21 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to ... See More ⇒
ipd530n15n3.pdf
isc N-Channel MOSFET Transistor IPD530N15N3,IIPD530N15N3 FEATURES Static drain-source on-resistance RDS(on) 53m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150... See More ⇒
Detailed specifications: IPD400N06NG , IPD49CN10NG , IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 , IPD50R399CP , IPD50R520CP , 7N65 , IPD600N25N3G , IPD60R1K4C6 , IPD60R2K0C6 , IPD60R380C6 , IPD60R385CP , IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 .
History: IPD70R950CE
Keywords - IPD530N15N3G MOSFET specs
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History: IPD70R950CE
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