All MOSFET. IPD60R600CP Datasheet

 

IPD60R600CP MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD60R600CP

Marking Code: 6R600P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 6.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 21 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 28 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO252

IPD60R600CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R600CP Datasheet (PDF)

0.1. ipd60r600cp.pdf Size:645K _infineon

IPD60R600CP IPD60R600CP

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0.2. ipd60r600cp.pdf Size:241K _inchange_semiconductor

IPD60R600CP IPD60R600CP

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 4.1. ipd60r600c6.pdf Size:1051K _infineon

IPD60R600CP IPD60R600CP

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4.2. ipd60r600c6.pdf Size:241K _inchange_semiconductor

IPD60R600CP IPD60R600CP

isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

Datasheet: IPD60R2K0C6 , IPD60R380C6 , IPD60R385CP , IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IRF4905 , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 .

 

 
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