IPD60R600CP PDF and Equivalents Search

 ..1. Size:645K  infineon
 ipd60r600cp.pdf

IPD60R600CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO252 ... See More ⇒

 ..2. Size:241K  inchange semiconductor
 ipd60r600cp.pdf

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage... See More ⇒

 4.1. Size:1224K  infineon
 ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super... See More ⇒

 4.2. Size:1051K  infineon
 ipd60r600c6.pdf

MOSFET + =L9D - PA... See More ⇒

 4.3. Size:241K  inchange semiconductor
 ipd60r600c6.pdf

isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒