All MOSFET. IPD60R600CP Datasheet

 

IPD60R600CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD60R600CP
   Marking Code: 6R600P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 6.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO252

 IPD60R600CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R600CP Datasheet (PDF)

 ..1. Size:645K  infineon
ipd60r600cp.pdf

IPD60R600CP
IPD60R600CP

IPD60R600CPCIMOS #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO252 :

 ..2. Size:241K  inchange semiconductor
ipd60r600cp.pdf

IPD60R600CP
IPD60R600CP

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CPFEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 4.1. Size:1224K  infineon
ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf

IPD60R600CP
IPD60R600CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R600C6Data SheetRev. 2.5FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R600C6, IPB60R600C6IPP60R600C6, IPA60R600C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the super

 4.2. Size:1051K  infineon
ipd60r600c6.pdf

IPD60R600CP
IPD60R600CP

MOSFET+ =L9D - PA

 4.3. Size:241K  inchange semiconductor
ipd60r600c6.pdf

IPD60R600CP
IPD60R600CP

isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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