Справочник MOSFET. IPD60R600CP

 

IPD60R600CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPD60R600CP

Маркировка: 6R600P

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 60 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3.5 V

Максимально допустимый постоянный ток стока (Id): 6.1 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 21 nC

Время нарастания (tr): 12 ns

Выходная емкость (Cd): 28 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm

Тип корпуса: TO252

Аналог (замена) для IPD60R600CP

 

 

IPD60R600CP Datasheet (PDF)

1.1. ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf Size:2519K _infineon

IPD60R600CP
IPD60R600CP

IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

1.2. ipd60r600p7s.pdf Size:912K _infineon

IPD60R600CP
IPD60R600CP

IPD60R600P7S MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSF

 1.3. ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf Size:2688K _infineon

IPD60R600CP
IPD60R600CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accor

1.4. ipd60r600cp.pdf Size:645K _infineon

IPD60R600CP
IPD60R600CP

IPD60R600CP CססIMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 21 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG‐TO252 :

 1.5. ipd60r600c6.pdf Size:1051K _infineon

IPD60R600CP
IPD60R600CP

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=G

1.6. ipd60r600e6.pdf Size:1339K _infineon

IPD60R600CP
IPD60R600CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS™ E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS™ E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)

1.7. ipd60r600p7.pdf Size:1186K _infineon

IPD60R600CP
IPD60R600CP

IPD60R600P7 MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFE

Другие MOSFET... IPD60R2K0C6 , IPD60R380C6 , IPD60R385CP , IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IRF4905 , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 .

 

 
Back to Top