All MOSFET. IPD64CN10NG Datasheet

 

IPD64CN10NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD64CN10NG

Marking Code: 64CN10N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 6 nC

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 132 pF

Maximum Drain-Source On-State Resistance (Rds): 0.064 Ohm

Package: TO252

IPD64CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD64CN10NG Datasheet (PDF)

0.1. ipd64cn10ng ipu64cn10ng.pdf Size:781K _1

IPD64CN10NG
IPD64CN10NG

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9.1. ipd640n06l g.pdf Size:993K _infineon

IPD64CN10NG
IPD64CN10NG

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9.2. ipd640n06l.pdf Size:241K _inchange_semiconductor

IPD64CN10NG
IPD64CN10NG

isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤64mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga

Datasheet: IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , IPD640N06LG , J111 , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG .

 

 
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