IPD64CN10NG Datasheet and Replacement. Cross Reference Search

IPD64CN10NG Datasheet (PDF)

..1. Size:781K 1
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9.1. Size:993K infineon
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9.2. Size:769K cn vbsemi
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IPD640N06LGwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

9.3. Size:241K inchange semiconductor
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isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06LFEATURESStatic drain-source on-resistance:RDS(on)64mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Ga

Datasheet: IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , IPD640N06LG , SPP20N60C3 , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG .