IPD75N04S4-06 MOSFET Datasheet: N-Ch, 40V, 75A. Full specification with pinout and replacement list

IPD75N04S4-06 Specs and Replacement

   Type Designator: IPD75N04S4-06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO252

IPD75N04S4-06 substitution

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IPD75N04S4-06 datasheet

..1. Size:154K infineon
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IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 5.9 m DS(on),max I 75 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD75N04S4-06 PG-TO252-3-313 4N0406 Maximum ratings,... See More ⇒

Detailed specifications: IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IRFB3607 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 .