IPD75N04S4-06 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD75N04S4-06
Marking Code: 4N0406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 58 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 24.5 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 490 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm
Package: TO252
IPD75N04S4-06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD75N04S4-06 Datasheet (PDF)
..1. ipd75n04s4-06 ipd75n04s4-06 ds 1 1.pdf 
Size:154K _infineon
IPD75N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.9mDS(on),maxI 75 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD75N04S4-06 PG-TO252-3-313 4N0406Maximum ratings,
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