All MOSFET. IPD75N04S4-06 Datasheet


IPD75N04S4-06 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD75N04S4-06

Marking Code: 4N0406

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 58 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 24.5 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 490 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm

Package: TO252

IPD75N04S4-06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IPD75N04S4-06 Datasheet (PDF)

..1. ipd75n04s4-06 ipd75n04s4-06 ds 1 1.pdf Size:154K _infineon

IPD75N04S4-06 IPD75N04S4-06

IPD75N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.9mDS(on),maxI 75 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD75N04S4-06 PG-TO252-3-313 4N0406Maximum ratings,

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