All MOSFET. IPD75N04S4-06 Datasheet

 

IPD75N04S4-06 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD75N04S4-06

Marking Code: 4N0406

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 58 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 24.5 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 490 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm

Package: TO252

IPD75N04S4-06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD75N04S4-06 Datasheet (PDF)

0.1. ipd75n04s4-06 ds 1 1.pdf Size:154K _infineon

IPD75N04S4-06 IPD75N04S4-06

IPD75N04S4-06 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 5.9 mΩ DS(on),max I 75 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD75N04S4-06 PG-TO252-3-313 4N0406 Maximum ratings,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top