All MOSFET. IPD75N04S4-06 Datasheet

 

IPD75N04S4-06 Datasheet and Replacement


   Type Designator: IPD75N04S4-06
   Marking Code: 4N0406
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24.5 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO252
 

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IPD75N04S4-06 Datasheet (PDF)

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IPD75N04S4-06

IPD75N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.9mDS(on),maxI 75 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD75N04S4-06 PG-TO252-3-313 4N0406Maximum ratings,

Datasheet: IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IRF1407 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 .

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