All MOSFET. IPD90N04S4-02 Datasheet

 

IPD90N04S4-02 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD90N04S4-02

Marking Code: 4N0402

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 91 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 1630 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0024 Ohm

Package: TO252

IPD90N04S4-02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD90N04S4-02 Datasheet (PDF)

0.1. ipd90n04s4-02 ds 1 0.pdf Size:152K _infineon

IPD90N04S4-02
IPD90N04S4-02

IPD90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.4mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-02 PG-TO252-3-313 4N0402Maximum ratings,

2.1. ipd90n04s4-04 ds 1 0.pdf Size:154K _infineon

IPD90N04S4-02
IPD90N04S4-02

IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,

2.2. ipd90n04s4-05 ds 1 0.pdf Size:154K _infineon

IPD90N04S4-02
IPD90N04S4-02

IPD90N04S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 86 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-05 PG-TO252-3-313 4N0405Maximum ratings,

 2.3. ipd90n04s4-03 ds 1 0.pdf Size:152K _infineon

IPD90N04S4-02
IPD90N04S4-02

IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,

Datasheet: IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IRF5305 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 , IPG20N04S4L-07 .

 

 
Back to Top