IPI50R380CE
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI50R380CE
Marking Code: 5R380CE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 10.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 46
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO262
IPI50R380CE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI50R380CE
Datasheet (PDF)
..1. Size:2917K infineon
ipi50r380ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S
7.1. Size:546K infineon
ipi50r350cp rev20a.pdf
IPI50R350CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 550 V!0 U )DK:GH ;>H / L ., + gR 0. 50 DS(on) maxU 2 AHF6 ADK HMU -7 ;F:: A:69 EA6H>C6CH PGTO2621)U . I6Ai;>:9 688DF9>CH8=
7.2. Size:547K infineon
ipi50r399cp rev20.pdf
IPI50R399CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 560 V!0 V )DL:HI ;>I / M ., + gR 0. 99 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI PGTO2621)V . J6Ai;>:9 688DG9>CI8=>C
7.3. Size:287K inchange semiconductor
ipi50r399cp.pdf
isc N-Channel MOSFET Transistor IPI50R399CPFEATURESStatic drain-source on-resistance:RDS(on) 0.399Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
7.4. Size:287K inchange semiconductor
ipi50r350cp.pdf
isc N-Channel MOSFET Transistor IPI50R350CPFEATURESStatic drain-source on-resistance:RDS(on) 0.35Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
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