All MOSFET. IPP070N08N3G Datasheet

 

IPP070N08N3G Datasheet and Replacement


   Type Designator: IPP070N08N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 780 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220
 

 IPP070N08N3G substitution

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IPP070N08N3G Datasheet (PDF)

 ..1. Size:1013K  infineon
 ipp070n08n3g ipi070n08n3g ipb067n08n3g.pdf pdf_icon

IPP070N08N3G

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 3.1. Size:1021K  infineon
 ipp070n08n3 ipp070n08n3 ipi070n08n3 ipb067n08n3.pdf pdf_icon

IPP070N08N3G

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 3.2. Size:246K  inchange semiconductor
 ipp070n08n3.pdf pdf_icon

IPP070N08N3G

isc N-Channel MOSFET Transistor IPP070N08N3,IIPP070N08N3FEATURESStatic drain-source on-resistance:RDS(on) 6.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high frequency switching and sync. Rec.Optimized technology for DC/DC converters

 6.1. Size:736K  infineon
 ipb070n06lg ipp070n06lg7.pdf pdf_icon

IPP070N08N3G

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Datasheet: IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG , IPP070N06LG , IPP070N06NG , MMIS60R580P , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G , IPP080N03LG , IPP080N06NG , IPP084N06L3G , IPP085N06LG , IPP086N10N3G .

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