BF1100WR MOSFET Datasheet: N-Ch, 14V, 0.03A. Full specification with pinout and replacement list

BF1100WR Specs and Replacement

   Type Designator: BF1100WR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 14 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   Cossⓘ - Output Capacitance: 2.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT343R

BF1100WR substitution

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BF1100WR datasheet

..1. Size:439K philips
bf1100wr.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain ... See More ⇒

..2. Size:100K philips
bf1100wr 1.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward trans... See More ⇒

..3. Size:146K philips
bf1100wr 0.pdf pdf_icon

8.1. Size:311K philips
bf1100 n.pdf pdf_icon

BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ht... See More ⇒