BF1100WR Todos los transistores

 

BF1100WR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF1100WR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 14 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 2.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
   Paquete / Cubierta: SOT343R
     - Selección de transistores por parámetros

 

BF1100WR Datasheet (PDF)

 ..1. Size:439K  philips
 bf1100wr.pdf pdf_icon

BF1100WR

DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain

 ..2. Size:100K  philips
 bf1100wr 1.pdf pdf_icon

BF1100WR

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 ..3. Size:146K  philips
 bf1100wr 0.pdf pdf_icon

BF1100WR

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 8.1. Size:311K  philips
 bf1100 n.pdf pdf_icon

BF1100WR

BF1100; BF1100RDual-gate MOS-FETsRev. 02 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.ht

MOSTRAR MÁS

Otros transistores... APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , BF1100 , BF1100R , IRF630 , BF1101 , BF1101R , BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 .

History: ASDM3050 | P2610ADG | IRFS630 | S10H12S | 2SK1402 | SIZ728DT | SIHFP048R

 

 
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