BF1100WR. Аналоги и основные параметры
Наименование производителя: BF1100WR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.28 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 14 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.03 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 2.2 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 200 Ohm
Тип корпуса: SOT343R
Аналог (замена) для BF1100WR
- подборⓘ MOSFET транзистора по параметрам
BF1100WR даташит
bf1100wr.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain
bf1100wr 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward trans
bf1100wr 0.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward trans
bf1100 n.pdf
BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ht
Другие IGBT... APT8065BVFR, APT8065BVR, APT8065SVR, APT8067HVR, APT8075BN, APT8075BVR, BF1100, BF1100R, IRF3710, BF1101, BF1101R, BF1101WR, BF1102, BF1105, BF1105R, BF1105WR, BF1109
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Список транзисторов
Обновления
MOSFET: AUP060N055 | AUP056N10 | AUP056N08BGL | AUP052N085 | AUP045N12 | AUP039N10 | AUP034N10 | AUP034N06 | AUP033N08BG | AUP026N085 | AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10
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