IPP139N08N3G Specs and Replacement

Type Designator: IPP139N08N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 353 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0139 Ohm

Package: TO220

IPP139N08N3G substitution

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IPP139N08N3G datasheet

 3.1. Size:1019K  infineon
 ipp139n08n3.pdf pdf_icon

IPP139N08N3G

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 R 1 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I 4 D Q H35>5?B=1... See More ⇒

 3.2. Size:496K  infineon
 ipb136n08n3-g ipp139n08n3-g ipi139n08n3-g.pdf pdf_icon

IPP139N08N3G

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching R 13.6 m DS(on),max (SMD) Optimized technology for DC/DC converters I 45 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qual... See More ⇒

Detailed specifications: IPP120N04S4-01, IPP120N04S4-02, IPP120N06NG, IPP120N06S4-02, IPP120N06S4-H1, IPP126N10N3G, IPP12CN10LG, IPP12CN10NG, 20N60, IPP147N03LG, IPP147N12N3G, IPP16CN10LG, IPP16CN10NG, IPP180N10N3G, IPP200N15N3G, IPP200N25N3G, IPP230N06L3G

Keywords - IPP139N08N3G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.