All MOSFET. IPP139N08N3G Datasheet

 

IPP139N08N3G Datasheet and Replacement


   Type Designator: IPP139N08N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 353 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0139 Ohm
   Package: TO220
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IPP139N08N3G Datasheet (PDF)

 3.1. Size:1019K  infineon
 ipp139n08n3.pdf pdf_icon

IPP139N08N3G

IPP139N08N3 G IPI139N08N3 GIPB136N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 R 1 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 4 DQ H35>5?B=1

 3.2. Size:496K  infineon
 ipb136n08n3-g ipp139n08n3-g ipi139n08n3-g.pdf pdf_icon

IPP139N08N3G

IPP139N08N3 G IPI139N08N3 GIPB136N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching R 13.6mDS(on),max (SMD) Optimized technology for DC/DC convertersI 45 AD Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qual

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History: VBNC1303 | IRFS4010PBF

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