IPP180N10N3G Specs and Replacement
Type Designator: IPP180N10N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 237 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
IPP180N10N3G substitution
- MOSFET ⓘ Cross-Reference Search
IPP180N10N3G datasheet
ipp180n10n3-g ipi180n10n3-g.pdf
IPP180N10N3 G IPI180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 18 m DS(on),max TO-263 Excellent gate charge x R product (FOM) DS(on) I 43 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applicatio... See More ⇒
ipp180n10n3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP180N10N3 IIPP180N10N3 FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE ... See More ⇒
Detailed specifications: IPP126N10N3G, IPP12CN10LG, IPP12CN10NG, IPP139N08N3G, IPP147N03LG, IPP147N12N3G, IPP16CN10LG, IPP16CN10NG, IRFZ44, IPP200N15N3G, IPP200N25N3G, IPP230N06L3G, IPP260N06N3G, IPP26CN10NG, IPP320N20N3G, IPP35CN10NG, IPP50CN10NG
Keywords - IPP180N10N3G MOSFET specs
IPP180N10N3G cross reference
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