All MOSFET. IPP180N10N3G Datasheet

 

IPP180N10N3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP180N10N3G
   Marking Code: 180N10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220

 IPP180N10N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP180N10N3G Datasheet (PDF)

 ..1. Size:559K  infineon
 ipp180n10n3g ipi180n10n3g.pdf

IPP180N10N3G IPP180N10N3G

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 3.1. Size:299K  infineon
 ipp180n10n3-g ipi180n10n3-g.pdf

IPP180N10N3G IPP180N10N3G

IPP180N10N3 GIPI180N10N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 18mDS(on),max TO-263 Excellent gate charge x R product (FOM)DS(on)I 43 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applicatio

 3.2. Size:246K  inchange semiconductor
 ipp180n10n3.pdf

IPP180N10N3G IPP180N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP180N10N3IIPP180N10N3FEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP034N08N5

 

 
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