IPP180N10N3G Datasheet and Replacement
Type Designator: IPP180N10N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 237 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
IPP180N10N3G substitution
IPP180N10N3G Datasheet (PDF)
ipp180n10n3-g ipi180n10n3-g.pdf

IPP180N10N3 GIPI180N10N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 18mDS(on),max TO-263 Excellent gate charge x R product (FOM)DS(on)I 43 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applicatio
ipp180n10n3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP180N10N3IIPP180N10N3FEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE
Datasheet: IPP126N10N3G , IPP12CN10LG , IPP12CN10NG , IPP139N08N3G , IPP147N03LG , IPP147N12N3G , IPP16CN10LG , IPP16CN10NG , IRFZ44 , IPP200N15N3G , IPP200N25N3G , IPP230N06L3G , IPP260N06N3G , IPP26CN10NG , IPP320N20N3G , IPP35CN10NG , IPP50CN10NG .
History: HMS8N60K | VB4290 | PN4093
Keywords - IPP180N10N3G MOSFET datasheet
IPP180N10N3G cross reference
IPP180N10N3G equivalent finder
IPP180N10N3G lookup
IPP180N10N3G substitution
IPP180N10N3G replacement
History: HMS8N60K | VB4290 | PN4093



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