All MOSFET. IPP50R350CP Datasheet

 

IPP50R350CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP50R350CP
   Marking Code: 5R350P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO220

 IPP50R350CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP50R350CP Datasheet (PDF)

 ..1. Size:563K  infineon
 ipp50r350cp.pdf

IPP50R350CP IPP50R350CP

IPP50R350CPCIMOSTM #:A0

 ..2. Size:245K  inchange semiconductor
 ipp50r350cp.pdf

IPP50R350CP IPP50R350CP

isc N-Channel MOSFET Transistor IPP50R350CPIIPP50R350CPFEATURESStatic drain-source on-resistance:RDS(on) 0.35Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 7.1. Size:547K  infineon
 ipp50r399cp.pdf

IPP50R350CP IPP50R350CP

IPP50R399CPCIMOSTM #:A0

 7.2. Size:2917K  infineon
 ipp50r380ce.pdf

IPP50R350CP IPP50R350CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S

 7.3. Size:245K  inchange semiconductor
 ipp50r399cp.pdf

IPP50R350CP IPP50R350CP

isc N-Channel MOSFET Transistor IPP50R399CPIIPP50R399CPFEATURESStatic drain-source on-resistance:RDS(on) 0.399Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 7.4. Size:245K  inchange semiconductor
 ipp50r380ce.pdf

IPP50R350CP IPP50R350CP

isc N-Channel MOSFET Transistor IPP50R380CEIIPP50R380CEFEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCV8450

 

 
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