All MOSFET. IPP60R125C6 Datasheet

 

IPP60R125C6 Datasheet and Replacement


   Type Designator: IPP60R125C6
   Marking Code: 6R125C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 96 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO220
 

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IPP60R125C6 Datasheet (PDF)

 ..1. Size:1257K  infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf pdf_icon

IPP60R125C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

 ..2. Size:275K  inchange semiconductor
ipp60r125c6.pdf pdf_icon

IPP60R125C6

isc N-Channel MOSFET Transistor IPP60R125C6IIPP60R125C6FEATURESStatic drain-source on-resistance:RDS(on) 0.125Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSwhile not sacrificing ease of us

 4.1. Size:571K  infineon
ipp60r125cp.pdf pdf_icon

IPP60R125C6

IPP60R125CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220 ::7!"%

 4.2. Size:245K  inchange semiconductor
ipp60r125cp.pdf pdf_icon

IPP60R125C6

isc N-Channel MOSFET Transistor IPP60R125CPIIPP60R125CPFEATURESStatic drain-source on-resistance:RDS(on) 0.125Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP16NK65Z | IXTP16N50P

Keywords - IPP60R125C6 MOSFET datasheet

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