IPS105N03LG Specs and Replacement

Type Designator: IPS105N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO251

IPS105N03LG substitution

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IPS105N03LG datasheet

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IPS105N03LG

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IPS105N03LG

STGIPS10K60A IGBT intelligent power module (IPM) 10 A, 600 V, DBC isolated SDIP-25L molded Features 10 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and free- wheeling diodes 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down resistor Internal bootstrap diode Interlocking function 5 k NTC thermistor fo... See More ⇒

Detailed specifications: IPP90R500C3, IPP90R800C3, IPS031N03LG, IPS040N03LG, IPS050N03LG, IPS060N03LG, IPS075N03LG, IPS090N03LG, 8N60, IPS110N12N3G, IPS118N10NG, IPS12CN10LG, IPS135N03LG, IPS50R520CP, IPU039N03LG, IPU050N03LG, IPU060N03LG

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.