All MOSFET. IPS105N03LG Datasheet

 

IPS105N03LG Datasheet and Replacement


   Type Designator: IPS105N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO251
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IPS105N03LG Datasheet (PDF)

 ..1. Size:1239K  1
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IPS105N03LG

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IPS105N03LG

STGIPS10K60AIGBT intelligent power module (IPM)10 A, 600 V, DBC isolated SDIP-25L moldedFeatures 10 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and free-wheeling diodes 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down resistor Internal bootstrap diode Interlocking function 5 k NTC thermistor fo

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History: VBNC1303 | IRFS4010PBF

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