IPS12CN10LG Specs and Replacement

Type Designator: IPS12CN10LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 528 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm

Package: TO251

IPS12CN10LG substitution

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IPS12CN10LG datasheet

 4.1. Size:614K  infineon
 ipp12cn10l-g ips12cn10l-g.pdf pdf_icon

IPS12CN10LG

IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, logic level RDS(on),max 12 mW Excellent gate charge x R product (FOM) DS(on) ID 69 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high... See More ⇒

 4.2. Size:261K  inchange semiconductor
 ips12cn10l.pdf pdf_icon

IPS12CN10LG

isc N-Channel MOSFET Transistor IPS12CN10L FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

Detailed specifications: IPS040N03LG, IPS050N03LG, IPS060N03LG, IPS075N03LG, IPS090N03LG, IPS105N03LG, IPS110N12N3G, IPS118N10NG, AO3400A, IPS135N03LG, IPS50R520CP, IPU039N03LG, IPU050N03LG, IPU060N03LG, IPU075N03LG, IPU090N03LG, IPU103N08N3G

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