IPU039N03LG Specs and Replacement
Type Designator: IPU039N03LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 1400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO251
IPU039N03LG substitution
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IPU039N03LG datasheet
ipu039n03lg ipf039n03lg.pdf
Type IPF039N03L G IPU039N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)... See More ⇒
Detailed specifications: IPS075N03LG, IPS090N03LG, IPS105N03LG, IPS110N12N3G, IPS118N10NG, IPS12CN10LG, IPS135N03LG, IPS50R520CP, IRF1405, IPU050N03LG, IPU060N03LG, IPU075N03LG, IPU090N03LG, IPU103N08N3G, IPU135N03LG, IPU135N08N3G, IPW50R140CP
Keywords - IPU039N03LG MOSFET specs
IPU039N03LG cross reference
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