IPU039N03LG Datasheet and Replacement
Type Designator: IPU039N03LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 1400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO251
IPU039N03LG substitution
IPU039N03LG Datasheet (PDF)
ipu039n03lg ipf039n03lg.pdf

Type IPF039N03L GIPU039N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
Datasheet: IPS075N03LG , IPS090N03LG , IPS105N03LG , IPS110N12N3G , IPS118N10NG , IPS12CN10LG , IPS135N03LG , IPS50R520CP , NCEP15T14 , IPU050N03LG , IPU060N03LG , IPU075N03LG , IPU090N03LG , IPU103N08N3G , IPU135N03LG , IPU135N08N3G , IPW50R140CP .
History: MTM13123 | NP89N04PDK
Keywords - IPU039N03LG MOSFET datasheet
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History: MTM13123 | NP89N04PDK



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