All MOSFET. IPU039N03LG Datasheet

 

IPU039N03LG Datasheet and Replacement


   Type Designator: IPU039N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO251
 

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IPU039N03LG Datasheet (PDF)

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IPU039N03LG

Type IPF039N03L GIPU039N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

Datasheet: IPS075N03LG , IPS090N03LG , IPS105N03LG , IPS110N12N3G , IPS118N10NG , IPS12CN10LG , IPS135N03LG , IPS50R520CP , NCEP15T14 , IPU050N03LG , IPU060N03LG , IPU075N03LG , IPU090N03LG , IPU103N08N3G , IPU135N03LG , IPU135N08N3G , IPW50R140CP .

History: WFY6N02

Keywords - IPU039N03LG MOSFET datasheet

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