All MOSFET. IPU090N03LG Datasheet

 

IPU090N03LG Datasheet and Replacement


   Type Designator: IPU090N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO251
 

 IPU090N03LG substitution

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IPU090N03LG Datasheet (PDF)

 ..1. Size:538K  1
 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf pdf_icon

IPU090N03LG

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

 9.1. Size:413K  infineon
 ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf pdf_icon

IPU090N03LG

IPD09N03LA IPF09N03LAIPS09N03LA IPU09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C

Datasheet: IPS118N10NG , IPS12CN10LG , IPS135N03LG , IPS50R520CP , IPU039N03LG , IPU050N03LG , IPU060N03LG , IPU075N03LG , IRF1405 , IPU103N08N3G , IPU135N03LG , IPU135N08N3G , IPW50R140CP , IPW50R199CP , IPW50R250CP , IPW50R299CP , IPW50R350CP .

History: SSP65R260S2E | IPP80N06S2L-05

Keywords - IPU090N03LG MOSFET datasheet

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