IPU103N08N3G Datasheet and Replacement
Type Designator: IPU103N08N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 490 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm
Package: TO251
IPU103N08N3G substitution
IPU103N08N3G Datasheet (PDF)
ipu103n08n31.pdf
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Datasheet: IPS12CN10LG , IPS135N03LG , IPS50R520CP , IPU039N03LG , IPU050N03LG , IPU060N03LG , IPU075N03LG , IPU090N03LG , 60N06 , IPU135N03LG , IPU135N08N3G , IPW50R140CP , IPW50R199CP , IPW50R250CP , IPW50R299CP , IPW50R350CP , IPW50R399CP .
History: SI8410DB | IPB80N06S2L-11 | AP30T10GK
Keywords - IPU103N08N3G MOSFET datasheet
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History: SI8410DB | IPB80N06S2L-11 | AP30T10GK
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