IPU103N08N3G Specs and Replacement

Type Designator: IPU103N08N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm

Package: TO251

IPU103N08N3G substitution

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IPU103N08N3G datasheet

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IPU103N08N3G

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IPU103N08N3G

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Detailed specifications: IPS12CN10LG, IPS135N03LG, IPS50R520CP, IPU039N03LG, IPU050N03LG, IPU060N03LG, IPU075N03LG, IPU090N03LG, IRLB3034, IPU135N03LG, IPU135N08N3G, IPW50R140CP, IPW50R199CP, IPW50R250CP, IPW50R299CP, IPW50R350CP, IPW50R399CP

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility