All MOSFET. SPA12N50C3 Datasheet

 

SPA12N50C3 Datasheet and Replacement


   Type Designator: SPA12N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220FP
 

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SPA12N50C3 Datasheet (PDF)

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SPA12N50C3

SPP12N50C3SPI12N50C3, SPA12N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11.6 A Ultra low gate chargePG-TO220-3-31 PG-TO262- PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 Ultra low effective capacitances 2 3211P-TO220-3-31 Improved transconductanceP-TO220-3

Datasheet: SPA07N60CFD , SPA07N65C3 , SPA08N50C3 , SPA08N80C3 , SPA11N60C3 , SPA11N60CFD , SPA11N65C3 , SPA11N80C3 , IRFB3607 , SPA15N60C3 , SPA15N60CFD , SPA15N65C3 , SPA16N50C3 , SPA17N80C3 , SPA20N60C3 , SPA20N60CFD , SPA20N65C3 .

History: 2SK4078-ZK | SIHF9520 | SI8819EDB | AFN04N60T220FT | TSM1N60LCH | AP9974AGH-HF | FS2302A

Keywords - SPA12N50C3 MOSFET datasheet

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